 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BUV61 HIGH POWER NPN SILICON TRANSISTOR s s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATION s SWITCHING REGULATORS s MOTOR CONTROL DESCRIPTION The BUV61 is a Multiepitaxial planar NPN transistor in TO-3 metal case. It's intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. 1 2 TO-3 (version " S ") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P Base P tot T stg Tj June 1997 Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Reverse Bias Base Dissipation (B.E. junction in avalanche) Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature Value 300 200 7 50 75 8 15 2 250 -65 to 200 200 Unit V V V A A A A W W o o C C 1/5 BUV61 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 10) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2A L = 25 mH I E = 50 mA IC IC IC IC IC IC IC IC IC IC = = = = = = = = = = 12.5A 25A 40A 12.5A 25A 40A 25A 40A 25A 40A IB IB IB IB IB IB IB IB IB IB = = = = = = = = = = 0.625A 2.5A 5A 0.625A 2.5A 5A 2.5A 5A 2.5A 5A 200 7 0.65 0.4 0.6 0.5 0.5 0.75 1.05 1.35 1.1 1.35 70 60 130 110 0.9 0.9 1.2 1.2 1.5 1.9 1.4 1.8 1.7 1.8 T c = 100 C V BE = -1.5V o V BE = - 1.5V T C =100 C o Min. Typ. Max. 1 5 1 4 1 Unit mA mA mA mA mA V V V CEO(sus) Collector-Emitter Sustaining Voltage V EB0 V CE(sat) Emitter-base Voltage (I c = 0) Collector-Emitter Saturation Voltage T j = 100 o C T j = 100 o C T j = 100 o C V V V V V V V V V A/s A/s V BE(sat) Base-Emitter Saturation Voltage T j = 100 o C T j = 100 o C I B1 =3.75A T j = 25 o C T j = 100o C I B1 =2.5A T j = 25 o C T j = 100 o C I B1 = 2.5A T j = 25 o C T j = 100 o C dic /dt Rated of Rise of on-state Collector Current Collector Emitter Dynamic Voltage Collector Emitter Dynamic Voltage V CC = 160V RC = 0 V CE(2s) V CC = 160V R C = 6.4 V CC = 160V R C = 6.4 1.3 1.8 0.95 1.1 3 5 2 3 V V V V V CE(4s) Pulsed: Pulse duration = 300 s, duty cycle = 2 % 2/5 BUV61 ELECTRICAL CHARACTERISTICS (continued) Symbol tr ts tf ts tf tt tc ts tf tt tc ts tf tt ts tf tt Parameter RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Tail Time in Turn-on Crossover Time Storage Time Fall Time Tail Time in Turn-on Crossover Time Storage Time Fall Time Tail Time in Turn-on Storage Time Fall Time Tail Time in Turn-on Test Conditions V CC = 160V V BB = -5V R B2 = 0.5 V CC = 160V I C = 25A V BB = -5V L C = 0.32mH V CC = 160V I C = 25A V BB = -5V L C = 0.32mH V CC = 160V I C = 25A V BB = 0 L C = 0.32mH V CC = 160V I C = 25A V BB = 0 L C = 0.32mH I C = 40A I B1 = 5A T p = 30s V clamp = 200V I B = 2.5A R B2 = 1 V clamp = 200V I B = 2.5A R B2 = 1 T j = 100 o C V clamp = 200V I B = 2.5A R B2 = 2.7 V clamp = 200V I B = 2.5A R B2 = 2.7 T j = 100 o C Min. Typ. 0.55 0.6 0.07 0.85 0.06 0.01 0.11 1.1 0.08 0.02 0.15 1.6 0.7 0.2 2.7 1 0.3 Max. 0.7 1.2 0.3 1.9 0.15 0.07 0.3 2.4 0.25 0.15 0.5 Unit s s s s s s s s s s s s s s s s s Pulsed: Pulse duration = 300 s, duty cycle = 2 % 3/5 BUV61 TO-3 (version S) MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 1.47 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.60 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.058 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.063 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003O 4/5 E BUV61 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5 |
Price & Availability of BUV61
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |